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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K4F160411C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 2. | K4F160411C-B | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 3. | K4F160411C-F | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 4. | K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 5. | K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 6. | K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 7. | K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 8. | K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 9. | K4F160412C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 10. | K4F160412C-B | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 11. | K4F160412C-F | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 12. | K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 13. | K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 14. | K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 15. | K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 16. | K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 232 Kb |
| 17. | K4F160811D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 233 Kb |
| 18. | K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 233 Kb |
| 19. | K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 233 Kb |
| 20. | K4F160812D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 233 Kb |
