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K4E171611D-J Datasheet

 Datasheet for Samsung Electronic
Description:1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 70°C
Package:SOJ
Pins:42
Link: K4E171611D-J.PDF (553Kb)


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K4E171611D-J.PDF

K4E171611D-J datasheet: 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. K4E171611D-J

Datasheet


RELEVANT RESULTS FOR K4E171611D-J DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4E170411D4M x 4Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
2.
Datasheet K4E170411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
3.
Datasheet K4E170411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
4.
Datasheet K4E170411D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
5.
Datasheet K4E170411D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
6.
Datasheet K4E170412D4M x 4Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
7.
Datasheet K4E170412D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
8.
Datasheet K4E170412D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
9.
Datasheet K4E170412D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
10.
Datasheet K4E170412D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
11.
Datasheet K4E170811D2M x 8Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
12.
Datasheet K4E170811D-B2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
13.
Datasheet K4E170811D-F2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
14.
Datasheet K4E170812D2M x 8Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
15.
Datasheet K4E170812D-B2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
16.
Datasheet K4E170812D-F2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
262 Kb
17.
Datasheet K4E171611D1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
18.
Datasheet K4E171611D-J1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
19.
Datasheet K4E171611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
20.
Datasheet K4E171611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb

 
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