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RELEVANT RESULTS FOR MM5369AA/N DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | TFMM5360 | Photo Modules for PCM Remote Control Systems | Vishay Siliconix | VISHAY | - | - | - | 134 Kb | 2. | KMM5361203C2W | 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 185 Kb | 3. | KMM5361203C2WG | 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 185 Kb | 4. | KMM5361205C2W | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 190 Kb | 5. | KMM5361205C2WG | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 190 Kb | 6. | KMM53616000BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 244 Kb | 7. | KMM53616000BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 244 Kb | 8. | KMM53616000CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 275 Kb | 9. | KMM53616000CKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 275 Kb | 10. | KMM53616004BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 272 Kb | 11. | KMM53616004BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 272 Kb | 12. | KMM53616004CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 306 Kb | 13. | KMM53616004CKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 306 Kb | 14. | KMM5362203C2W | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb | 15. | KMM5362203C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb | 16. | KMM5362205C2W | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 194 Kb | 17. | KMM5362205C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | Samsung semiconductor | SAMSUNG | - | - | - | 194 Kb | 18. | KMM53632000BK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 259 Kb | 19. | KMM53632000BKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 259 Kb | 20. | KMM53632000CK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | SAMSUNG | - | - | - | 288 Kb |
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