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F1116 Datasheet

 Datasheet for
Description:40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:POFET
Temp. range:Min: -65°C | Max: 150°C
Package:Not available...
Pins:4
Link: F1116.PDF (42Kb)


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F1116.PDF

F1116 datasheet: 40 Watt, Patented  gold metalized silicon gate enhancement mode RF power VDMOS transistor F1116

Datasheet


RELEVANT RESULTS FOR F1116 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet F1116PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
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33 Kb
2.
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13.
Datasheet WDM-CAD0F111Coarse Wavelength Division Multiplexer/Demultiplexer (CWDM) Filter
JDS Uniphase Corporation
JDSU
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-
154 Kb
14.
Datasheet 5082-F111-00000Black Surface Seven Segment Displays
Agilent(Hewlett-Packard)
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199 Kb
15.
Datasheet HDSP-F111-00000Black Surface Seven Segment Displays
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199 Kb
16.
Datasheet IRKTF111-04HLFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
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144 Kb
17.
Datasheet IRKTF111-04HLNFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
International Rectifier
IRF
-
-
-
144 Kb
18.
Datasheet IRKTF111-04HNFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
International Rectifier
IRF
-
-
-
144 Kb
19.
Datasheet IRKTF111-04HNNFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
International Rectifier
IRF
-
-
-
144 Kb
20.
Datasheet IRKTF111-08HLFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
International Rectifier
IRF
-
-
-
144 Kb
21.
Datasheet IRKTF111-08HLNFAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
International Rectifier
IRF
-
-
-
144 Kb

 
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