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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  2N684 | SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS | Central Semiconductor Corp | CENTRAL | - | - | - | 100 Kb |
| 2. | 2N684 | SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS | Central Semiconductor Corp | CENTRAL | - | - | - | 100 Kb |
| 3. | 2N684 | DIFFUSED SILICON PNPN CINTROLLED RECTIFIER | New Jersey Semi-Conductor Products, Inc. | NJSEMI | - | - | - | 143 Kb |
| 4. | 2N6841 | SI NPN POWER BJT | New Jersey Semi-Conductor Products, Inc. | NJSEMI | - | - | - | 97 Kb |
| 5. | 2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | IRF | - | - | - | 133 Kb |
| 6. | 2N6845 | P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Seme LAB | SEMELAB | - | - | - | 34 Kb |
| 7. | 2N6845 | P-CHANNEL ENHANCEMENT MOSFET | New Jersey Semi-Conductor Products, Inc. | NJSEMI | - | - | - | 79 Kb |
| 8. | JANTX2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | IRF | - | - | - | 133 Kb |
| 9. | JANTXV2N6845 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | International Rectifier | IRF | - | - | - | 133 Kb |
| 10. | 2N6845LCC4 | PCHANNEL POWER MOSFET | Seme LAB | SEMELAB | - | - | - | 20 Kb |
| 11. | 2N6847 | P-Channel MOSFET in a Hermetically sealed TO39 Metal Package | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 12. | JANTX2N6847 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | IRF | - | - | - | 137 Kb |
| 13. | JANTXV2N6847 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | IRF | - | - | - | 137 Kb |
| 14. | JANTX2N6847U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | IRF | - | - | - | 142 Kb |
| 15. | JANTXV2N6847U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | IRF | - | - | - | 142 Kb |
| 16. | 2N6849 | P.CHANNEL POWER MOSFETs | Seme LAB | SEMELAB | - | - | - | 25 Kb |
| 17. | 2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | MICROSEMI | - | - | - | 93 Kb |
| 18. | 2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | MICROSEMI | - | - | - | 147 Kb |
| 19. | 2N6849 | P-CHANNEL ENHANCEMENT MOSFET | New Jersey Semi-Conductor Products, Inc. | NJSEMI | - | - | - | 93 Kb |
| 20. | JANS2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | IRF | - | - | - | 139 Kb |
| 21. | JANTX2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | IRF | - | - | - | 139 Kb |
