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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K246 | Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package | Siemens Semiconductor Group | SIEMENS | - | - | - | 15 Kb |
| 2. | K246 | Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package | Siemens Semiconductor Group | SIEMENS | - | - | - | 15 Kb |
| 3. | K246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC | NEC | - | - | - | 88 Kb |
| 4. | K246 | N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 159 Kb |
| 5. | K246 | Small switching (60V, 2A) | Rohm | ROHM | - | - | - | 134 Kb |
| 6. | K246 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device | SANYO | - | - | - | 34 Kb |
| 7. | K246 | N-channel MOS-FET | Fuji Electric | FUJI | - | - | - | 98 Kb |
| 8. | 2SK246 | N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 159 Kb |
| 9. | 2SK246 | Silicon N Channel Junction Type For Constant Current, Impedance | Toshiba Semiconductor | TOSHIBA | - | - | - | 425 Kb |
| 10. | Q62705-K246 | Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package | Siemens Semiconductor Group | SIEMENS | - | - | - | 15 Kb |
| 11. | 2SK2461 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC | NEC | - | - | - | 88 Kb |
| 12. | 2SK2462 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC | NEC | - | - | - | 88 Kb |
| 13. | 2SK2463 | Small switching (60V, 2A) | Rohm | ROHM | - | - | - | 134 Kb |
| 14. | 2SK2464 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device | SANYO | - | - | - | 34 Kb |
| 15. | 2SK2466 | N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 296 Kb |
| 16. | 2SK2467 | N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 89 Kb |
| 17. | 2SK2467 | Silicon N Channel MOS Type High-Power Amplifier Application | Toshiba Semiconductor | TOSHIBA | - | - | - | 104 Kb |
| 18. | 2SK2467-Y | N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 89 Kb |
| 19. | 2SK2467_06 | Silicon N Channel MOS Type High-Power Amplifier Application | Toshiba Semiconductor | TOSHIBA | - | - | - | 104 Kb |
| 20. | 2SK2469-01MR | N-channel MOS-FET | Fuji Electric | FUJI | - | - | - | 98 Kb |
| 21. | 2SK246BL | N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 159 Kb |
