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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K4E640412E-TI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 212 Kb |
| 2. | K4E660412E-TI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 212 Kb |
| 3. | K4S643232E-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 78 Kb |
| 4. | K4S643232F-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V | Samsung semiconductor | SAMSUNG | - | - | - | 77 Kb |
| 5. | LTI602 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 6. | LTI602F | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 7. | LTI602FT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 8. | LTI602T | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 9. | LTI602UF | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 10. | LTI602UFT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 11. | LTI606 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 12. | LTI606F | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 13. | LTI606FT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 14. | LTI606T | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 15. | LTI606UF | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
| 16. | LTI606UFT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 223 Kb |
| 17. | 3R3TI60E-080 | DIODE and TYRISTOR MODULE | Fuji Electric | FUJI | - | - | - | 131 Kb |
| 18. | STI60N55F3 | N-channel 55 V, 6.5 mY, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 615 Kb |
| 19. | 4R3TI60Y-080 | DIODE and TYRISTOR MODULE | Fuji Electric | FUJI | - | - | - | 136 Kb |
| 20. | LTI610 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | VMI | - | - | - | 218 Kb |
