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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  TC75 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
| 2. | TC75 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
| 3. | K4S1G0732B-TC75 | SDRAM stacked 1Gb B-die | Samsung semiconductor | SAMSUNG | - | - | - | 135 Kb |
| 4. | K4S280432F-TC75 | 128Mb F-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 153 Kb |
| 5. | K4S280432F-TC75 | 128Mb F-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 156 Kb |
| 6. | K4S280832B-TC75 | 4M x 8Bit x 4 Banks Sychronous DRAM | Samsung semiconductor | SAMSUNG | - | - | - | 131 Kb |
| 7. | K4S280832E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 155 Kb |
| 8. | K4S280832F-TC75 | 128Mb F-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 153 Kb |
| 9. | K4S280832F-TC75 | 128Mb F-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 156 Kb |
| 10. | K4S281632B-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 118 Kb |
| 11. | K4S281632C-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 123 Kb |
| 12. | K4S281632D-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
| 13. | K4S281632E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 155 Kb |
| 14. | K4S510432B-TC75 | 512Mb B-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 160 Kb |
| 15. | K4S510432M-TC75 | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
| 16. | K4S510732B-TC75 | Stacked 512Mbit SDRAM | Samsung semiconductor | SAMSUNG | - | - | - | 112 Kb |
| 17. | K4S510832B-TC75 | 512Mb B-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 160 Kb |
| 18. | K4S510832M-TC75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
| 19. | K4S511632B-TC75 | 512Mb B-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 160 Kb |
| 20. | K4S560432D-TC75 | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
| 21. | K4S560432E-TC75 | 256Mb E-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 203 Kb |
