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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | MGF1001BT | Tape carrier microwave power GaAs fet | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 141 Kb |
2. | MGF1302 | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 193 Kb |
3. | MGF1303 | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 161 Kb |
4. | MGF1303B | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 161 Kb |
5. | MGF1303B | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 314 Kb |
6. | MGF1303B_97 | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 314 Kb |
7. | MGF1304A | FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 489 Kb |
8. | MGF1305 | FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 377 Kb |
9. | MGF1402B | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 344 Kb |
10. | MGF1402B | LOW NOISE GaAs FET | Mitsumi Electronics, Corp. | MITSUMI | - | - | - | 148 Kb |
11. | MGF1403B | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 305 Kb |
12. | MGF1403B | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 152 Kb |
13. | MGF1403B_1 | LOW NOISE GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 305 Kb |
14. | MGF1423B | SMALL SIGNAL GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 241 Kb |
15. | MGF1451A | Low Noise MES FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 182 Kb |
16. | MGF1601B | MICROWAVE POWER GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 26 Kb |
17. | MGF1601B | MICROWAVE POWER GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 178 Kb |
18. | MGF1601B | High-power GaAs FET (small signal gain stage) | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 209 Kb |
19. | MGF1601B_1 | MICROWAVE POWER GaAs FET | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 178 Kb |
20. | MGF1601B_11 | High-power GaAs FET (small signal gain stage) | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 209 Kb |