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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K4E641612D | CMOS DRAM | Samsung semiconductor | SAMSUNG | - | - | - | 431 Kb |
| 2. | K4E641612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 3. | K4E641612B-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 4. | K4E641612B-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 5. | K4E641612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 6. | K4E641612B-TC50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 7. | K4E641612B-TC60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 8. | K4E641612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 9. | K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 10. | K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 11. | K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 12. | K4E641612C-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 13. | K4E641612C-50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 14. | K4E641612C-60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 15. | K4E641612C-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 16. | K4E641612C-T | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 17. | K4E641612C-T45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 18. | K4E641612C-T50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 19. | K4E641612C-T60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 20. | K4E641612C-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 21. | K4E641612C-TC45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
