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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  CT9 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal, Sintered Anode TANTALEX Capacitors | Vishay Siliconix | VISHAY | - | - | - | 137 Kb |
| 2. | CT9 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal, Sintered Anode TANTALEX Capacitors | Vishay Siliconix | VISHAY | - | - | - | 137 Kb |
| 3. | CR16HCT9 | CR16MCT9/CR16MCT5/CR16HCT9/CR16HCT5 16-Bit Reprogrammable/ROM Microcontroller | National Semiconductor | NSC | - | - | - | 1.35 Mb |
| 4. | CR16MCT9 | CR16MCT9/CR16MCT5/CR16HCT9/CR16HCT5 16-Bit Reprogrammable/ROM Microcontroller | National Semiconductor | NSC | - | - | - | 1.35 Mb |
| 5. | K4R761869A-FCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 328 Kb |
| 6. | K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 328 Kb |
| 7. | MR16R1624EG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 8. | MR16R1628EG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 9. | MR16R162GEG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 10. | MR18R1624EG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 11. | MR18R1628AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | SAMSUNG | - | - | - | 431 Kb |
| 12. | MR18R1628EG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 13. | MR18R1624AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | SAMSUNG | - | - | - | 431 Kb |
| 14. | MR18R326GAG0-CT9 | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V | Samsung semiconductor | SAMSUNG | - | - | - | 269 Kb |
| 15. | MR18R162GAF0-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | SAMSUNG | - | - | - | 431 Kb |
| 16. | MR18R162GEG0-CT9 | Key Timing Parameters | Samsung semiconductor | SAMSUNG | - | - | - | 454 Kb |
| 17. | TS2931CT9.0 | 100mA Ultra Low Dropout Positive Voltage Regulator | Taiwan Semiconductor Company, Ltd | TSC | - | - | - | 144 Kb |
| 18. | ACT90 | miniature surface mount Watch Crystal | Advanced Crystal Technology | ACT | - | - | - | 292 Kb |
| 19. | TS2931CT90 | 100mA Ultra Low Dropout Positive Voltage Regulator | Taiwan Semiconductor Company, Ltd | TSC | - | - | - | 144 Kb |
| 20. | AM29DL322CT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory | Advanced Micro Devices | AMD | - | - | - | 386 Kb |
| 21. | AM29DL323CT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory | Advanced Micro Devices | AMD | - | - | - | 386 Kb |
