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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  LTL2V3TCK7 | Property of Lite-On Only | Lite-On Technology Corporation | LITEON | - | - | - | 526 Kb |
| 2. | K4R271669B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 3. | K4R271669B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 4. | K4R441869B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 5. | K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb |
| 6. | K4R441869B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 7. | K4R271669AN-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 8. | K4R271669AM-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 9. | K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 10. | K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 11. | K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 12. | K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 13. | K4R271669A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 14. | K4R441869A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 15. | MR16R0824BN1-CK7 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 16. | MR16R0828BN1-CK7 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 17. | MR16R0826BN1-CK7 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 18. | MR16R082CGBN1-CK7 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 19. | CCK70 | Limiter dual-element time-delay lift-truck fuse. 70 amperes, 130 Volts DC. Interrupting rating: 10,000 amperes. | Littelfuse | LITTELFUSE | - | - | - | 101 Kb |
| 20. | CCK70-120A | Fork-Lift and Stud-Mounted Fuses | Littelfuse | LITTELFUSE | - | - | - | 101 Kb |
