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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
2. | 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
3. | 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
4. | 2SK3070L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
5. | 2SK3070L-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
6. | 2SK3070S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
7. | 2SK3070STL-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
8. | 2SK3072 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device | SANYO | - | - | - | 32 Kb |
9. | 2SK3074 | N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | Toshiba Semiconductor | TOSHIBA | - | - | - | 110 Kb |
10. | 2SK3074 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 158 Kb |
11. | 2SK3074_07 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 158 Kb |
12. | 2SK3075 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 166 Kb |
13. | 2SK3075 | N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | Toshiba Semiconductor | TOSHIBA | - | - | - | 113 Kb |
14. | 2SK3075_07 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 166 Kb |
15. | 2SK3076 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
16. | 2SK3076L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
17. | 2SK3076S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
18. | 2SK3077 | SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) | Toshiba Semiconductor | TOSHIBA | - | - | - | 151 Kb |
19. | 2SK3077 | 900 MHz BAND AMPLIFIER APPLICATIONS | Toshiba Semiconductor | TOSHIBA | - | - | - | 110 Kb |
20. | 2SK3077A | VHF/UHF Band Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 112 Kb |
21. | 2SK3077_07 | SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) | Toshiba Semiconductor | TOSHIBA | - | - | - | 151 Kb |