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RELEVANT RESULTS FOR 204CT-4 DATASHEET| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. |  SP204CT | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors | Sipex Corporation | SIPEX | - | - | - | 220 Kb | | 2. | SP204CT | 5V High-Speed RS-232 Transceivers with 0.1mF Capacitors | Sipex Corporation | SIPEX | - | - | - | 274 Kb | | 3. | 204CT-4 | THERMOPILE TYPE INFRARED SENSOR | List of Unclassifed Manufacturers | ETC | - | - | - | 687 Kb | | 4. | KM416V1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 5. | KM416C1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 6. | KM416C1204CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 7. | KM416V1204CT-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 8. | KM416C1204CT-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 9. | KM416V1204CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 10. | KM416C1204CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 11. | KM416C1204CT-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 12. | KM416V1204CT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 13. | KM416V1204CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 14. | KM416C1204CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | SAMSUNG | - | - | - | 506 Kb | | 15. | KM416C1204CT-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 16. | KM416V1204CT-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 17. | KM416C1204CT-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 18. | KM416V1204CT-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 19. | KM416C1204CT-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.54 Mb | | 20. | SP204CT/TR | 5V High-Speed RS-232 Transceivers with 0.1mF Capacitors | Sipex Corporation | SIPEX | - | - | - | 274 Kb |
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