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W4NXD8C-S000 Datasheet

 Datasheet for
Description:Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Manufacturer:CREE
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: W4NXD8C-S000.PDF (279Kb)


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W4NXD8C-S000.PDF

W4NXD8C-S000 datasheet: Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition W4NXD8C-S000

Datasheet


RELEVANT RESULTS FOR W4NXD8C-S000 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet W4NXD8C-0000Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb
2.
Datasheet W4NXD8C-L000Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb
3.
Datasheet W4NXD8C-S000Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb
4.
Datasheet W4NXD8D-0000Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb
5.
Datasheet W4NXD8D-S000Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb
6.
Datasheet W4NXD8G-0000Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
CREE
-
-
-
284 Kb

 
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