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F1516 Datasheet

 Datasheet for
Description:16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:POFET
Temp. range:Min: -65°C | Max: 150°C
Package:Not available...
Pins:2
Link: F1516.PDF (37Kb)


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F1516.PDF

F1516 datasheet: 16 Watt, Patented  gold metalized silicon gate enhancement mode RF power VDMOS transistor F1516

Datasheet


RELEVANT RESULTS FOR F1516 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet F1516PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
POLYFET
-
-
-
31 Kb
2.
Datasheet F1516PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
POLYFET
-
-
-
31 Kb
3.
Datasheet PIC16F151628/40/44-Pin Flash Microcontrollers with nanoWatt XLP Technology
Microchip Technology
MICROCHIP
-
-
-
2.87 Mb
4.
Datasheet PIC16LF151628/40/44-Pin Flash Microcontrollers with nanoWatt XLP Technology
Microchip Technology
MICROCHIP
-
-
-
2.87 Mb
5.
Datasheet K4F1516111M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
6.
Datasheet K4F151611D1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
7.
Datasheet K4F151611D-J1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
8.
Datasheet K4F151611D-T1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
9.
Datasheet K4F151611D-T1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
10.
Datasheet K4F151612D1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
11.
Datasheet K4F151612D-J1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
12.
Datasheet K4F151612D-T1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
13.
Datasheet K4F151612D-T1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
531 Kb
14.
Datasheet ATF1516AE-102nd Generation EE Complex Programmable Logic Devices
ATMEL Corporation
ATMEL
-
-
-
624 Kb
15.
Datasheet ATF1516AE-52nd Generation EE Complex Programmable Logic Devices
ATMEL Corporation
ATMEL
-
-
-
624 Kb
16.
Datasheet ATF1516AE-72nd Generation EE Complex Programmable Logic Devices
ATMEL Corporation
ATMEL
-
-
-
624 Kb
17.
Datasheet ATF1516ASHigh Performance EE-Based CPLD
ATMEL Corporation
ATMEL
-
-
-
277 Kb
18.
Datasheet ATF1516AS-10QC160High Performance EE-Based CPLD
ATMEL Corporation
ATMEL
-
-
-
277 Kb
19.
Datasheet ATF1516AS-10QHC208High Performance EE-Based CPLD
ATMEL Corporation
ATMEL
-
-
-
277 Kb
20.
Datasheet ATF1516AS-10UC192High Performance EE-Based CPLD
ATMEL Corporation
ATMEL
-
-
-
277 Kb
21.
Datasheet ATF1516AS-15Q160High Performance EE-Based CPLD
ATMEL Corporation
ATMEL
-
-
-
277 Kb

 
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