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K4R881869M-NCK7 Datasheet

 Datasheet for Samsung Electronic
Description:512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 100°C
Package:microBGA(normal CSP)
Pins:56
Link: K4R881869M-NCK7.PDF (3Mb)


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K4R881869M-NCK7.PDF

K4R881869M-NCK7 datasheet: 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R881869M-NCK7

Datasheet


RELEVANT RESULTS FOR K4R881869M-NCK7 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4R881869288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb
2.
Datasheet K4R881869D256/288Mbit RDRAM(D-die)
Samsung semiconductor
SAMSUNG
-
-
-
327 Kb
3.
Datasheet K4R881869I-DCDirect RDRAM Product Guide
Samsung semiconductor
SAMSUNG
-
-
-
42 Kb
4.
Datasheet K4R881869M288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb
5.
Datasheet K4R881869M-NBCCG6288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb
6.
Datasheet K4R881869M-NCG6512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb
7.
Datasheet K4R881869M-NCK7288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb
8.
Datasheet K4R881869M-NCK8288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.57 Mb

 
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