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K4R271869B-MCG6 Datasheet

 Datasheet for Samsung Electronic
Description:256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 100°C
Package:microBGA(mirrored CS
Pins:54
Link: K4R271869B-MCG6.PDF (306Kb)


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K4R271869B-MCG6.PDF

K4R271869B-MCG6 datasheet: 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. K4R271869B-MCG6

Datasheet


RELEVANT RESULTS FOR K4R271869B-MCG6 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4R271669A256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
2.
Datasheet K4R271669A-NMCG6256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
3.
Datasheet K4R271669A-NMCK7256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
4.
Datasheet K4R271669A-NMCK8256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
5.
Datasheet K4R271669AM-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
6.
Datasheet K4R271669AM-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
7.
Datasheet K4R271669AM-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
8.
Datasheet K4R271669AN-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
9.
Datasheet K4R271669AN-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
10.
Datasheet K4R271669AN-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
Samsung semiconductor
SAMSUNG
-
-
-
2.55 Mb
11.
Datasheet K4R271669B256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
12.
Datasheet K4R271669B-MCG6256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
13.
Datasheet K4R271669B-MCK7256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
14.
Datasheet K4R271669B-MCK8256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
15.
Datasheet K4R271669B-NCG6256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
16.
Datasheet K4R271669B-NCK7256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
17.
Datasheet K4R271669B-NCK8256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung semiconductor
SAMSUNG
-
-
-
325 Kb
18.
Datasheet K4R271669D128Mbit RDRAM(D-die)
Samsung semiconductor
SAMSUNG
-
-
-
319 Kb
19.
Datasheet K4R271669D-T128Mbit RDRAM(D-die)
Samsung semiconductor
SAMSUNG
-
-
-
319 Kb
20.
Datasheet K4R271669D-TCS8128Mbit RDRAM(D-die)
Samsung semiconductor
SAMSUNG
-
-
-
319 Kb

 
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