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K4F160411D-F Datasheet

 Datasheet for Samsung Electronic
Description:4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 70°C
Package:TSOP-II
Pins:24
Link: K4F160411D-F.PDF (225Kb)


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K4F160411D-F.PDF

K4F160411D-F datasheet: 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. K4F160411D-F

Datasheet


RELEVANT RESULTS FOR K4F160411D-F DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4F160411C4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
2.
Datasheet K4F160411C-B4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
3.
Datasheet K4F160411C-F4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
4.
Datasheet K4F160411D4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
5.
Datasheet K4F160411D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
6.
Datasheet K4F160411D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
7.
Datasheet K4F160411D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
8.
Datasheet K4F160411D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
9.
Datasheet K4F160412C4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
10.
Datasheet K4F160412C-B4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
11.
Datasheet K4F160412C-F4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
12.
Datasheet K4F160412D4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
13.
Datasheet K4F160412D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
14.
Datasheet K4F160412D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
15.
Datasheet K4F160412D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
16.
Datasheet K4F160412D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
232 Kb
17.
Datasheet K4F160811D2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
233 Kb
18.
Datasheet K4F160811D-B2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
233 Kb
19.
Datasheet K4F160811D-F2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
233 Kb
20.
Datasheet K4F160812D2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
233 Kb

 
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