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NE5521N Datasheet

 Datasheet for Philips Semiconductors
Description:LVDT signal conditioner
Manufacturer:Philips Semiconductors
Temp. range:Min: - | Max: -
Package:SOT102
Pins:Not available...
Link: NE5521N.PDF (69Kb)


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NE5521N.PDF

NE5521N datasheet: LVDT signal conditioner NE5521N

Datasheet


RELEVANT RESULTS FOR NE5521N DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet NE5520279ANECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NEC
NEC
-
-
-
169 Kb
2.
Datasheet NE5520279A3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
286 Kb
3.
Datasheet NE5520279A-T1NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NEC
NEC
-
-
-
169 Kb
4.
Datasheet NE5520279A-T1-A3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
286 Kb
5.
Datasheet NE5520379ANECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
308 Kb
6.
Datasheet NE5520379A-T1A-ANECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
308 Kb
7.
Datasheet NE5521LVDT signal conditioner
NXP Semiconductors
PHILIPS
-
-
-
75 Kb
8.
Datasheet NE5521DLVDT signal conditioner
NXP Semiconductors
PHILIPS
-
-
-
75 Kb
9.
Datasheet NE5521NLVDT signal conditioner
NXP Semiconductors
PHILIPS
-
-
-
75 Kb
10.
Datasheet NE552R479ANECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
414 Kb
11.
Datasheet NE552R479A-T1A-ANECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs
CEL
-
-
-
414 Kb
12.
Datasheet NE552R679A3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NEC
NEC
-
-
-
65 Kb
13.
Datasheet NE552R679A-T13.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NEC
NEC
-
-
-
65 Kb
14.
Datasheet NE552R679A-T1A3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NEC
NEC
-
-
-
65 Kb

 
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