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|Description:||P-channel MOS silicon FET, very high-speed switching application|
|Manufacturer:||SANYO Electric Co., Ltd.|
|Temp. range:||Min: - | Max: -|
|Link: 2SJ268.PDF (90Kb)|
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RELEVANT RESULTS FOR 2SJ268 DATASHEET
|1.|| 2SJ263||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||85 Kb|
|2.|| 2SJ264||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||84 Kb|
|3.|| 2SJ265||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||88 Kb|
|4.|| 2SJ266||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||91 Kb|
|5.|| 2SJ267||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||86 Kb|
|6.|| 2SJ268||Very High-Speed Switching Applications||Sanyo Semicon Device||SANYO||-||-||-||94 Kb||