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K4E660812C-TCL-5 Datasheet

 Datasheet for Samsung Electronic
Description:8M x 8bit CMOS dynamic RAM with extended data out, 50ns
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 70°C
Package:TSOP II
Pins:32
Link: K4E660812C-TCL-5.PDF (416Kb)


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K4E660812C-TCL-5.PDF

K4E660812C-TCL-5 datasheet: 8M x 8bit CMOS dynamic RAM with extended data out, 50ns K4E660812C-TCL-5

Datasheet


RELEVANT RESULTS FOR K4E660812C-TCL-5 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4E660411D16M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
427 Kb
2.
Datasheet K4E660411D-JC5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
427 Kb
3.
Datasheet K4E660411D-JC6016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
427 Kb
4.
Datasheet K4E660411D-TC5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
427 Kb
5.
Datasheet K4E660411D-TC6016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
427 Kb
6.
Datasheet K4E660412D16M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
435 Kb
7.
Datasheet K4E660412D-JC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
435 Kb
8.
Datasheet K4E660412D-TC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
435 Kb
9.
Datasheet K4E660412E16M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
10.
Datasheet K4E660412E-JI4516M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
11.
Datasheet K4E660412E-JI5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
12.
Datasheet K4E660412E-JI6016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
13.
Datasheet K4E660412E-JP4516M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
14.
Datasheet K4E660412E-JP5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
15.
Datasheet K4E660412E-JP6016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
16.
Datasheet K4E660412E-TI4516M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
17.
Datasheet K4E660412E-TI5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
18.
Datasheet K4E660412E-TI6016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
19.
Datasheet K4E660412E-TP4516M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb
20.
Datasheet K4E660412E-TP5016M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
212 Kb

 
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