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RC10S06G Datasheet

 Datasheet for
Description:Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
Manufacturer:SSE
Temp. range:Min: -50°C | Max: 150°C
Package:Not available...
Pins:Not available...
Link: RC10S06G.PDF (14Kb)


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RC10S06G.PDF

RC10S06G datasheet: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. RC10S06G

Datasheet


RELEVANT RESULTS FOR RC10S06G DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet IRG4RC10SINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
International Rectifier
IRF
-
-
-
131 Kb
2.
Datasheet RC10S01SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
3.
Datasheet RC10S01GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
4.
Datasheet RC10S02SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
5.
Datasheet RC10S02GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
6.
Datasheet RC10S04SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
7.
Datasheet RC10S04GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
8.
Datasheet RC10S06SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
9.
Datasheet RC10S06GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
10.
Datasheet RC10S08SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
11.
Datasheet RC10S08GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
12.
Datasheet RC10S10SILICON SILASTIC CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
13.
Datasheet RC10S10GSILICON GPP CELL RECTIFIER
Shanghai Sunrise Electronics
SSE
-
-
-
15 Kb
14.
Datasheet IRG4RC10SDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
International Rectifier
IRF
-
-
-
196 Kb

 
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