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K4E151611D-J Datasheet

 Datasheet for Samsung Electronic
Description:1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 70°C
Package:SOJ
Pins:42
Link: K4E151611D-J.PDF (553Kb)


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K4E151611D-J.PDF

K4E151611D-J datasheet: 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. K4E151611D-J

Datasheet


RELEVANT RESULTS FOR K4E151611D-J DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4E1516111M x 16Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
2.
Datasheet K4E151611D1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
3.
Datasheet K4E151611D-J1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
4.
Datasheet K4E151611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
5.
Datasheet K4E151611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
6.
Datasheet K4E151612D1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
7.
Datasheet K4E151612D-J1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
8.
Datasheet K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
9.
Datasheet K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb
10.
Datasheet K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
556 Kb

 
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