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RELEVANT RESULTS FOR MTD6N10E DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | MTD6N10 | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT | Motorola, Inc | MOTOROLA | - | - | - | 173 Kb | 2. | MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM | Motorola, Inc | MOTOROLA | - | - | - | 221 Kb | 3. | MTD6N15 | Power Field Effect Transistor DPAK for Surface Mount | ON Semiconductor | ONSEMI | - | - | - | 99 Kb | 4. | MTD6N15 | TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM | Motorola, Inc | MOTOROLA | - | - | - | 241 Kb | 5. | MTD6N15-1 | Power Field Effect Transistor DPAK for Surface Mount | ON Semiconductor | ONSEMI | - | - | - | 99 Kb | 6. | MTD6N15T4 | Power Field Effect Transistor DPAK for Surface Mount | ON Semiconductor | ONSEMI | - | - | - | 99 Kb | 7. | MTD6N15T4G | NChannel EnhancementMode Silicon Gate | ON Semiconductor | ONSEMI | - | - | - | 121 Kb | 8. | MTD6N20E | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM | Motorola, Inc | MOTOROLA | - | - | - | 279 Kb | 9. | MTD6N20E | Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | ON Semiconductor | ONSEMI | - | - | - | 87 Kb | 10. | MTD6N20E1 | Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | ON Semiconductor | ONSEMI | - | - | - | 87 Kb | 11. | MTD6N20ET4 | Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | ON Semiconductor | ONSEMI | - | - | - | 87 Kb | 12. | MTD6N20ET4G | Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | ON Semiconductor | ONSEMI | - | - | - | 87 Kb |
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